Process for fabricating films of uniform properties on semiconductor devices
AssigneeMicron Technology, Inc.
InventorsGarry Anthony Mercaldi, Don Carl Powell
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Abstract
A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.
Claims29
A semiconductor device structure comprising a substrate having a silicon layer formed thereover, said silicon layer having a total thickness variation of about 3.5% or less.
A semiconductor device structure, comprising a silicon oxide layer formed thereover, said silicon oxide layer having a total thickness variation of less than about 4.8%.
A material layer formed over a semiconductor substrate, the material layer having a total thickness variation of about 2.6% or less.
A semiconductor device structure comprising a substrate having a silicon nitride layer formed thereon, said silicon nitride layer having a total thickness variation of about 2.6% or less.
A silicon oxide layer deposited over a semiconductor substrate, the silicon oxide layer having a total thickness variation of about 4.8% or less.
Dependencies are inferred from the claim text.