Single substrate processing film forming method
AssigneeTokyo Electron Limited
InventorShao Shou Qian
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Abstract
A single substrate processing film forming method including depositing an amorphous metal oxide film on a target substrate by chemical vapor deposition and reforming the metal oxide film in a reforming gas to remove an organic impurity contained in the film. The reforming gas is mixture of an excited oxygen gas with a non-excited oxygen gas. The reformation heats the film to a temperature higher than a crystallization temperature of the amorphous metal oxide film to perform crystallization at the same time.
Claims22
A single substrate processing film forming method, comprising:
- a deposition step of depositing a film comprising an amorphous metal oxide on a target substrate by chemical vapor deposition CVD;
- a reformation step of supplying a reforming gas onto the film to remove an organic impurity contained in the film;
- and
- a crystallization step of heating the film to a temperature higher than a crystallization temperature of the metal oxide to crystallize the film,
- wherein the reformation step comprises a step of preparing the reforming gas by mixing an excited oxygen gas with a non-excited oxygen gas, and
- the reformation step comprises a step of heating the film to a temperature higher than the crystallization temperature of the metal oxide in order to perform the crystallization step at the same time as the reformation step.
A single substrate processing film forming method comprising:
- a deposition step of supplying a raw material gas, which offers a metal by decomposition, and an oxidizing gas onto a target substrate to deposit a film comprising an amorphous metal oxide on the target substrate by chemical vapor deposition CVD;
- a reformation step of supplying a reforming gas comprising an excited oxygen gas onto the film to remove an organic impurity contained in the film;
- and
- a crystallization step of heating the film to a temperature higher than a crystallization temperature of the metal oxide to crystallize the film,
- wherein the deposition step and the reformation step are performed at substantially the same time by supplying the raw material gas, the oxidizing gas, and the reforming gas into a single process chamber at substantially the same time.
A single substrate processing film forming method comprising:
- a deposition step of supplying a raw material gas, which offers a metal by decomposition, and an oxidizing gas onto a target substrate to deposit a film comprising an amorphous metal oxide on the target substrate by chemical vapor deposition CVD;
- a reformation step of supplying a reforming gas containing an excited oxygen gas onto the film to remove an organic impurity contained in the film;
- and
- a crystallization step of heating the film to a temperature higher than a crystallization temperature of the metal oxide to crystallize the film,
- wherein the deposition step and the reformation steps are repeated a plurality of times before the crystallization step.
The method according to 20, wherein the reformation step comprises a step of preparing the reforming gas by mixing the excited oxygen gas with a non-excited oxygen gas.
Dependencies are inferred from the claim text.