Method for forming thin-film layer for device and organic electroluminescence device
AssigneeIdemitsu Kosan Co., Ltd.
InventorsHiroshi Tokailin, Yoshikazu Nagasaki
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AssigneeIdemitsu Kosan Co., Ltd.
InventorsHiroshi Tokailin, Yoshikazu Nagasaki
Estimating the term…
The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1): Di/D0i∝(L0/Li)3 cosniθi (1) wherein L0 is a distance from an evaporation source to a plane of the substrate in a perpendicular direction, D0i is a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Di is a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Li in a direction of an angle θi against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.
A method for an element of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising,
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