US 6,649,021 B2 · Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield

Abstract

A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

Claims5

Dependent claims

A plasma processing apparatus for plasma-processing a workpiece by electrostatically attracting said workpiece on a sample stage and applying a bias power to said workpiece, comprising:

a first electrode to which said bias power is applied and a power supply for electrostatic attraction of the workpiece is connected;
a second electrode electrically isolated from said first electrode and disposed on a part of a surface of said first electrode and connected to receive said bias power;
and
a bias power supply circuit which supplies the bias power to said second electrode, said bias power supply circuit comprising a variable impedance circuit including a parallel circuit composed of a capacitor and an inductor enabling variable changing of a feed impedance difference of bias power to a plurality of positions within the surface of said workpiece.

1 more element

Dependencies are inferred from the claim text.

Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield

Life of this patent

Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield

Life of this patent

Abstract

Claims5