Steam cleaning system and method for semiconductor process equipment
AssigneeQuantum Global Technologies, LLC
InventorsDavid S. Zuck, Kurtis R. Macura
Life of this patent
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Abstract
Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.
Claims13
A method for removing etch contaminants of aluminum and a halogen selected from a group consisting of chlorine and fluorine from a gas distribution plate of a reaction chamber, the gas-distribution plate including a plurality of channels, the method comprising:
- a. heating water to produce steam, the steam having a temperature above 212 degrees Fahrenheit and a pressure of at least one atmosphere;
- and
- b. forcing the steam through the channels to remove the etch contaminants from the gas-distribution plate.
A method of removing an etch contaminant of aluminum and at least one of chlorine and fluorine from channels in a gas-distribution plate contaminated in a reaction chamber, the method comprising:
- a. attaching a steam source to a cleaning fixture, the steam source providing steam to the cleaning fixture, wherein the steam is of a temperature greater than 212 degrees Fahrenheit and a pressure of at least one atmosphere;
- b. attaching the gas-distribution plate to the cleaning fixture;
- and
- c. forcing the steam through the channels via the cleaning fixture to remove the etch contaminant from the gas-distribution plate.
Dependencies are inferred from the claim text.