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US 6,648,976 B1Granted
Apparatus and method for plasma processing
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsIzuru Matsuda, Hideo Haraguchi, Takuya Matsui, Shigeyuki Yamamoto
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Abstract
A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.
Claims10
A plasma processing apparatus comprising:
- a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application;
- and
- a substrate hold stage within said vacuum chamber, with said substrate hold stage including a set face on which is to be held a substrate that is to be subjected to plasma processing, wherein said set face has an outer edge and a recessed portion such that when the substrate is held on said set face not less than 5% and not greater than 15% of a planar area of the substrate is in contact with said set face, said recessed portion comprising plural recesses that define a surface area such that the recesses corresponding to at least 80% of said surface area have a depth of not more than 100 μm and a recesses corresponding to from 5% to 20% of said surface area has a depth of greater than 100 μm and is located nearer to said outer edge of said set face than are said recesses having a death of not more 100 μm.
A plasma processing apparatus comprising:
- a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application;
- and
- a substrate hold stage within said vacuum chamber, with said substrate hold stage including a set face on which is to be held a substrate that is to be subjected to plasma processing, wherein said set face has an outer edge and recessed portions defining a surface area such that the recessed portions corresponding to at least 80% of said surface area have a depth of not greater than 100 μm and a recessed portions corresponding to from 5% to 20% of said surface area has a depth of greater than 100 μm and is located nearer to said outer edge of said set face than are said recesses having a depth of not more 100 μm,
- wherein said recessed portions corresponding to at least 80% of said surface area have a depth of approximately 100 μm and said recessed portions corresponding to from 5% to 20% of said surface area has a depth of approximately 300 μm.
1 more element
Dependencies are inferred from the claim text.