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US 6,647,048 B2Granted
Grating-outcoupled surface-emitting lasers using quantum wells with thickness and composition variation
AssigneePhotodigm, Inc.
InventorGary A. Evans
Life of this patent
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Abstract
A laser diode system that has two distributed Bragg reflector reflectors at either end and an outcoupling aperture between the reflectors. The quantum wells in the active region are thicker in the gain region than in other parts of the device, increasing efficiency and lowering threshold current.
Claims20
A laser diode system, comprising:
- a cavity having a reflector at both ends;
- an active layer, comprising a gain region and an outeoupling region, said active layer being located between said reflectors, wherein said outcoupling region is a path for a main laser beam to be emitted from a surface of the cavity;
- wherein said cavity has quantum wells, said quantum wells being thicker in said gain region than in other passive regions.
A laser diode system, comprising:
- a cavity having an active layer and reflectors at both ends;
- gain regions within said active layer and between said reflectors;
- an outcoupling aperture located between said reflectors, wherein said outcoupling aperture is a path for a main laser beam to be emitted from a surface of the cavity;
- wherein said cavity has quantum wells therein, wherein said quantum wells may be formed by differing thicknesses and compositions of epitaxial semiconductor material;
- wherein said cavity further comprises regions of different quantum well thickness such that there is a higher photon transition energy required outside said gain regions than inside said gain regions.
2 more elements
A laser diode system, comprising:
- a cavity having an active layer and reflectors at both ends;
- gain regions and an outcoupling aperture between said reflectors, wherein said outcoupling aperture is a path for a main laser beam to be emitted from a surface of the cavity;
- wherein the required photon transition energy is lower at said gain regions than in the rest of said cavity.
A laser diode system, comprising:
- a cavity having an active layer and reflecting regions at both ends;
- gain regions and an outcoupling aperture between said reflecting regions, wherein said outcoupling aperture is a path for a main laser beam to be emitted from a surface of the cavity;
- wherein there is a larger bandgap in the active layer outside said gain regions than inside said gain regions.
A laser diode system, comprising:
- a cavity having an active layer and reflecting regions at both ends;
- one or more gain regions between said reflecting regions;
- an outcoupling region between said reflecting regions, wherein said outcoupling region is a path for a main laser beam to be emitted from a surface of the cavity;
- wherein said cavity further comprises quantum wells, said quantum wells varying in thickness and composition such that said reflecting regions and said outcoupling region are more transparent to laser light than said gain regions.
1 more element
Dependencies are inferred from the claim text.