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US 6,647,043 B2Granted
Semiconductor laser device capable of preventing degradation of characteristics
AssigneeNEC Corporation
InventorsTakahiro Arakida, Hitoshi Hotta
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Abstract
A semiconductor laser device includes an inner lower clad layer formed on a semiconductor layer, an active layer formed on the inner lower clad layer, an inner upper clad layer formed the active layer, a blocking layer formed on the inner upper clad layer to block current, wherein the blocking layer having a concave portion, and an outer upper clad layer formed to cover the blocking layer. Carriers are injected to the active layer through the outer upper clad layer and the concave portion of the blocking layer.
Claims7
A semiconductor laser device comprising:
- an inner lower clad layer formed on a semiconductor layer;
- an active layer formed on said inner lower clad layer;
- an inner upper clad layer formed on said active layer;
- a blocking layer formed on said inner upper clad layer to block current, said blocking layer having a concave portion that has a non-zero thickness and is Zn ion diffused;
- and
- a Zn ion diffused outer upper clad layer formed to cover said blocking layer, wherein carriers are injected to said active layer through said outer upper clad layer and said concave portion of said blocking layer.
3 more elements
Dependencies are inferred from the claim text.