Nitride semiconductor laser device and method for manufacturing the same
AssigneePioneer Corporation
InventorsMamoru Miyachi, Hiroyuki Ota
Life of this patent
Estimating the term…
Abstract
A group-III nitride semiconductor laser device with excellent optical characteristics and its manufacturing method are provided. The method does not include steps that require high assembly precision. The group-III nitride semiconductor laser device comprises a substrate which has a cut-out portion. A laser facet of a multi-layer body is located near the cut-out portion of the substrate.
Claims8
A nitride semiconductor laser device comprising a multi-layer body including a plurality of group-III nitride semiconductor (AlxGa1−x)1−yInyN (0≦x≦1, 0≦y≦1) crystal layers and a substrate which is highly cleavable, wherein said multi-layer body and said substrate are glued upon each other and said substrate has at least a cut-out portion near a laser facet of said multi-layer body.
Dependencies are inferred from the claim text.