Semiconductor memory device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHiroki Shimano, Katsumi Dosaka
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsHiroki Shimano, Katsumi Dosaka
Estimating the term…
In a memory sub-block, a refresh activation instruction signal from a main control circuit is taken in by a de-multiplexer in a local control circuit under a predetermined condition and refreshing is executed in the memory sub-block. The de-multiplexer is inhibited from taking in this refresh activation instruction signal when an adjacent memory sub-block is in an inactivated state with the corresponding memory block being in an activated state or when refreshing is completed in the corresponding memory sub-block, and transfers this refresh activation instruction signal to a local control circuit arranged for the memory sub-block on the next stage in a refresh activation instruction signal transferring path. Upon completion of refreshing in all the memory sub-blocks, refreshing is carried out on the next refresh address. It is possible to provide a semiconductor memory device which can fully hide a refreshing operation from outside.
A semiconductor memory device comprising:
Dependencies are inferred from the claim text.