Low power type Rambus DRAM
AssigneeHynix Semiconductor Inc.
InventorJong Tae Kwak
Life of this patent
Estimating the term…
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AssigneeHynix Semiconductor Inc.
InventorJong Tae Kwak
Estimating the term…
Disclosed is low power type Rambus DRAM including top/bottom memory bank units respectively comprising a plurality of banks for storing data, top and bottom serial/parallel shifter units, an interface logic circuit unit, a delay lock loop (DLL) unit and an input/output block unit. The top serial/parallel shifter unit is connected between the top memory bank unit and the input/output block unit and the bottom serial/parallel shifter unit is connected between the bottom memory bank unit and the input/output block unit. The interface logic circuit unit generates a signal for selecting the top or the bottom memory bank unit according to read or write command received from the external. The DLL unit generates a clock signal according to the signal outputted from the interface logic circuit unit. The input/output block unit generates a signal for selectively controlling the operation of top and bottom serial/parallel shifter units by buffering the clock signal generated from the DLL unit.
A low power type Rambus DRAM comprising:
Dependencies are inferred from the claim text.