Method for storing and reading data in a multilevel nonvolatile memory
AssigneeSTMicroelectronics S.r.l.
InventorsRino Micheloni, Giovanni Campardo
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Abstract
The data management method applies to a multilevel nonvolatile memory device having a memory array formed by a plurality of memory cells. Each of the memory cells stores a number of bits that is not an integer power of two, for example three. In this way, one data byte is stored in a non-integer number of memory cells. The managing method includes storing, in a same clock cycle, a data word formed by a plurality of bytes, by programming a preset number of adjacent memory cells. Reading is performed by reading, in a same clock cycle, the stored data word.
Claims21
A data managing method in a multilevel nonvolatile memory device having a memory array including a plurality of memory cells, the method comprising:
- storing in each of said memory cells a stored number of bits that is not an integer power of two;
- and
- storing a data byte in a non-integer number of the memory cells.
A data managing method in a multilevel nonvolatile memory device having a memory array including a plurality of memory cells, the method comprising:
- storing in each of said memory cells a stored number of bits that is not an integer power of two;
- and
- storing in the memory array, during a first clock cycle, a data word comprising a plurality of bytes.
A data managing method in a multilevel nonvolatile memory device having a memory array including a plurality of memory cells, the method comprising:
- storing in each of said memory cells a stored number of bits that is not an integer power of tow;
- in which a bytes comprises a preset number of bits, the storing step comprising storing in said memory cells a number of bits equal to a non-integer multiple of said preset number of bits.
A nonvolatile memory device comprising:
- a memory array having a plurality of memory cells, wherein each of said memory cells stores a number of bits that is not an integer power of two, wherein said memory array comprises a preset number of adjacent memory cells storing a data word formed by a plurality of bytes;
- a preset number of sense amplifiers equal to said preset number of adjacent memory cells, each of said sense amplifiers having an output;
- a selector having a plurality of data inputs, a control input and output, said data inputs of said selector being each connected to a respective output of said sense amplifiers;
- and
- a binary column decoder connected to said control input of said selector for connecting a selected data input among said data inputs to said output of said selector.
A method for storing data in a nonvolatile memory, comprising:
- storing in a first memory cell a bit of a first byte;
- and
- storing in the first memory cell a first bit of a second byte while simultaneously storing in the first memory cell the first bit of the first byte.
Dependencies are inferred from the claim text.