Non-volatile memory

A memory module comprising a plurality of memory circuits formed in a unitary package, each memory circuit comprising a non-volatile cross-point memory array and an address decoding circuit fabricated on a common non-semiconductor substrate, wherein each memory circuit is formed from first and second layers of traverse conductor tracks separated by a storage layer including at least one non-semiconductor substrate layer.

A memory module as claimed in claim 24, wherein each memory element is switchable between low and high impedance states, representing respective binary data states, by application of a write signal in the form of a predetermined current density through the memory element, each memory element including a diode junction and a fuse or an anti-fuse formed in said storage layer.

A digital data memory system comprising:

• a memory module having a plurality of non-volatile cross point memory arrays for permanently storing write-once data, each cross point memory array being formed on a non-semiconductor substrate, and the non-semiconductor substrates form the unitary package;
• and
• an interface card adapted for interconnection with a data processing appliance, the interface card including control circuitry for addressing, writing to, and reading from the memory module, and a memory module interface adapted to receive said memory module and interconnection said control circuitry and said memory arrays.