Magnetic memory using reverse magnetic field to improve half-select margin

A magnetic memory comprising:

• an array of magnetic memory cells each including a data storage layer having an easy axis;
• an array of word and bit lines crossing the magnetic memory cells, each magnetic memory cell being intersected by a word line and a bit line;
• and
• a circuit coupled to the array of word and bit lines configured to apply a reverse magnetic field to one or more half-selected magnetic memory cells to improve the half-select margin in the magnetic memory,
• wherein a write current supplied to one or more word and bit-lines creates either the first magnetic field or the second magnetic field in the half-selected magnetic memory cells which are intersected by either the one or more word lines or the one or more bit lines,
• wherein the circuit supplies a current to one or more half-selected magnetic memory cells which are intersected by either the one or more word lines or the one or more bit lines to create the reverse magnetic field, wherein a reverse magnetic field component along the easy axis of the one or more half-selected magnetic memory cells is opposite in direction to the component along the easy axis of either the first magnetic field or the second magnetic field,
• wherein the reverse magnetic field component along the easy axis is less than the component along the easy axis of either the first magnetic field or the second magnetic field.

A magnetic memory comprising:

• an array of memory cells;
• an array of first conductors extending in a first direction which intersect the array of memory cells;
• an array of second conductors extending in a second direction which intersect the array of memory cells;
• and
• write circuitry coupled to the first conductors and the second conductors, the write circuitry providing a first write current and a second write current respectively to a first conductor and a second conductor crossing a selected memory cell, wherein the write circuitry provides first reverse currents or second reverse currents respectively to one or more first conductors and one or more second conductors crossing half-selected memory cells, wherein the first write current and the first reverse currents have opposite polarity, and wherein the second write current and the second reverse currents have opposite polarity.

A method for improving the half-select margin in a magnetic memory, the method comprising:

• applying a reverse magnetic field to one or more half-selected magnetic memory cells to improve the half-select margin in the magnetic memory;
• providing an array of conductors;
• and
• supplying a write current to a pair of conductors to create either a first magnetic field or a second magnetic field in the half-selected magnetic memory cells which are not intersected by the pair of conductors;
• and
• supplying a reverse current to the one or more half-selected magnetic memory cells which are not intersected by the pair of conductors to create the reverse magnetic field, wherein a reverse magnetic field component along an easy axis of the one or more half-selected magnetic memory cells is opposite in direction to the component along the easy axis of either the first magnetic field or the second magnetic field,
• wherein the reverse magnetic field component along the easy axis is less than the component along the easy axis of either the first magnetic field or the second magnetic field.