Manufacturing method for an active matrix display including a capacitor formed from a short ring electrode
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHongyong Zhang, Satoshi Teramoto
Life of this patent
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Abstract
A method for manufacturing an active matrix type display device is disclosed. The method comprises the steps of forming a plurality of semiconductor regions over a substrate; forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other; and forming impurity regions by implanting impurity ions into the plurality of semiconductor regions, wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed.
Claims25
A method for manufacturing an active matrix type display device comprising an active matrix circuit and a driver circuit for driving the active matrix circuit, both formed over a same substrate, the method comprising the steps of:
- forming a plurality of semiconductor regions over a substrate;
- forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other;
- and
- forming impurity regions by implanting impurity ions into the plurality of semiconductor regions,
- wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed.
A method for manufacturing an active matrix type display device comprising an active matrix circuit and a driver circuit for driving the active matrix circuit, both formed over a same substrate, the method comprising the steps of:
- forming a plurality of semiconductor regions over a substrate;
- forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other with a discharge pattern interposed there between;
- and
- forming impurity regions by implanting impurity ions into the plurality of semiconductor regions,
- wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed.
A method for manufacturing an active matrix type display device comprising an active matrix circuit and a driver circuit for driving the active matrix circuit, both formed over a same substrate, the method comprising the steps of:
- forming a plurality of semiconductor regions over a substrate;
- forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other;
- and
- forming impurity regions by an implantation of impurity ions into the plurality of semiconductor regions,
- wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed simultaneously with the step of forming the impurity regions.
A method for manufacturing an active matrix type display device comprising an active matrix circuit and a driver circuit for driving the active matrix circuit, both formed over a same substrate, the method comprising the steps of:
- forming a plurality of semiconductor regions over the substrate;
- forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other;
- and
- forming impurity regions by implanting impurity ions into the plurality of semiconductor regions,
- wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed.
A method for manufacturing an active matrix type display device comprising an active matrix circuit and a driver circuit for driving the active matrix circuit, both formed over a same substrate, the method comprising the step of:
- forming a plurality of semiconductor regions over the substrate;
- forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other with a discharge pattern interposed there between;
- and
- forming impurity regions by implanting impurity ions into the plurality of semiconductor regions,
- wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed.
A method for manufacturing an active matrix type display device comprising an active matrix circuit and a driver circuit for driving the active matrix circuit, both formed over a same substrate, the method comprising the steps of:
- forming a plurality of semiconductor regions over the substrate;
- forming a short ring electrode and gate electrodes adjacent to the plurality of semiconductor regions with an insulating film interposed there between, wherein the short ring electrode and at least one of the gate electrodes are electrically connected with each other via a discharge pattern interposed there between;
- and
- forming impurity regions by an implantation of impurity ions into the plurality of semiconductor regions,
- wherein a capacitor comprising the short ring electrode, the insulating film, and at least one of the plurality of semiconductor regions is formed simultaneously with the step of forming the impurity regions.
Dependencies are inferred from the claim text.