Temperature-compensated semiconductor resistor and semiconductor integrated circuit having the semiconductor resistor
AssigneeInfineon Technologies AG
InventorMartin Bloch
Life of this patent
Estimating the term…
Abstract
A temperature-compensated semiconductor resistor includes two series-connected semiconductor resistance elements having mutually inverse resistive temperature-dependent responses in a temperature range of interest. The semiconductor resistance elements are preferably made of doped polycrystalline semiconductor material such as polycrystalline silicon that is oppositely doped, i.e. n-doped and p-doped, respectively. A semiconductor integrated circuit, in particular a CMOS circuit, containing a semiconductor resistor, is also provided.
Claims5
A temperature-compensated semiconductor resistor, comprising:
- two series-connected semiconductor resistance elements having mutually inverse resistive temperature responses in a temperature range of interest, said semiconductor resistance elements formed of doped polycrystalline silicon material of opposite conductivity types;
- and
- an electrically conductive connecting layer sandwiched between and separating said semiconductor resistance elements.
A semiconductor integrated circuit, comprising:
- a temperature-compensated semiconductor resistor including two series-connected semiconductor resistance elements having mutually inverse resistive temperature responses in a temperature range of interest, said semiconductor resistance elements formed of doped polycrystalline silicon material of opposite conductivity types, and an electrically conductive connecting layer sandwiched between and separating said semiconductor resistance elements.
A CMOS circuit, comprising:
- a temperature-compensated semiconductor resistor including two series-connected semiconductor resistance elements having mutually inverse resistive temperature responses in a temperature range of interest, said semiconductor resistance elements formed of doped polycrystalline silicon material of opposite conductivity types, and an electrically conductive connecting layer sandwiched between and separating said semiconductor resistance elements.
Dependencies are inferred from the claim text.