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US 6,646,494 B2Granted
Semiconductor integrated circuit device having boosting circuit
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYoshitsugu Dohi, Akira Hosogane
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Abstract
When a stage increasing signal, which is input into a sub boosting circuit, is at the L level, three boosting stages are used within the sub boosting circuit to boost a supply potential. On the other hand, when the stage increasing signal is at an H level, four boosting stages are used within the sub boosting circuit to boost the supply potential. Thus, by the semiconductor integrated circuit device of the invention, an internal potential can be boosted at a high speed while power consumption can be reduced.
Claims3
A semiconductor integrated circuit device, comprising:
- a plurality of boosters, each booster boosting a respective internal potential;
- a plurality of determination circuits corresponding to said plurality of boosters, each determination circuit determining whether or not the internal potential boosted by each corresponding booster is at a respective predetermined potential;
- and
- a clock generating circuit receiving an external signal and generating an internal clock signal, said clock generating circuit stopping generation of said internal clock signal when each of said determination circuits determines that the potential boosted by each of said boosters is at its respective predetermined potential.
1 more element
Dependencies are inferred from the claim text.