Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter

A method of manufacturing a test probe for testing operability of semiconductor devices, said test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between said tip portion and said test pad said method comprising the steps of:

• sintering powdered raw materials to form a linear metal material, and heat treating said linear metal material in an atmosphere of non-oxidizing gas under such conditions that a treatment temperature is not higher than a recrystallization of said linear metal material and pressure of said non-oxidizing gas is raised to a level at which a volume of said linear metal material contracts over time.

A member for removing foreign matter adhering to a test probe tip that is brought into contact with the member, wherein said member comprising:

• a resin member capable of elastic deformation, a first metallic member formed on a surface of said resin member as a continuous film having predetermined tensile strength, and a ceramic member formed on a surface of said metallic member as a continuous film having a predetermined thickness, wherein said member comprises a resin member of a material having a Young's modulus of 100-400 kgf/mm2, a metallic member formed on the surface of said resin member as a film having tensile strength of not less than 20 kgf/mm2 and a thickness of 50-150 angstroms, and the ceramic member formed on the surface of said metallic member as a film having a thickness of not more than 5 microns.

A member for removing foreign matter adhering to a test probe tip that is brought into contact with the member, wherein said member comprising:

• a resin member capable of elastic deformation, a first metallic member formed on a surface of said resin member as a continuous film having predetermined tensile strength, and a ceramic member formed on a surface of said metallic member as a continuous film having a predetermined thickness, wherein a second metallic member formed on the surface of said first metallic member, intei-posed between said first metallic member and said ceramic member being more extensible than said first metallic, wherein said member comprises a resin member of a material having a Young's modulus of 100 - 400 kgf/mm2, said first metallic member formed on the surface of said resin member as a film having tensile strength of not less than 20 kgf/mm2 and a thickness of 50 - 150 angstroms, said second metallic member formed on the surface of said metallic member as a film made of any of Cu, Al, Ag and Au or an alloy of these elements, and said ceramic member formed on the surface of said second metallic member as a film having a thickness of not more than 5 microns.

A member for removing foreign matter adhering to a probe tip, wherein said member comprises a resin member of a material having a Young's modulus of 100-400 kgf/mm2, a metallic member formed on the surface of said resin member as a film having a tensile strength of not less than 20 kgf/mm2 and a thickness of 50-150 angstroms, a nickel plated layer formed on the surface of said metallic member in a thickness of not more than 5 microns, and ceramic particles fixedly dispersed in said nickel plated layer and having a diameter smaller than the thickness of said nickel plated layer.

A member for removing foreign matter adhering to a probe tip, wherein said member comprises a resin member of a material having a Young's modulus of 100-400 kgf/mm2, a metallic member formed on the surface of said resin member as a film having tensile strength of not less than 20 kgf/mm2 and a thickness of 50-150 angstroms, a nickel plated layer formed on the surface of said metallic member in thickness of not more than 5 microns, and silicon particles or silicon carbide particles fixedly dispersed in said nickel plated layer and having a diameter smaller than the thickness of said nickel plated layer.

A test probe for testing operability of semiconductor devices, said test probe comprising a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between said tip portion and said test pad, wherein said test probe is formed to have a tip shape with an angle of not less than 15 degrees formed at a surface of said test pad between a tangential line with respect to a tip face of said test probe and said pad surface when said test probe is pressed against said test pad, the tip shape of said test probe having a spherical surface meeting a relationship of:

• θcos−1(1−t/R)≧15°
• where a radius of curvature of said spherical surface is R, a thickness of said test pad is t, and the angle formed at said pad surface between the tangential line with respect to said tip face and said pad surface when said test probe is pressed against said test pad is θ.