Semiconductor power device and method of formation

A method for forming a semiconductor device comprising:

• forming a first interconnect and a second interconnect overlying a semiconductor device substrate;
• forming a passivation layer over the first interconnect and the second interconnect;
• patterning the passivation layer to define a first pad opening that exposes portions of the first interconnect and a second pad opening that exposes portions of the second interconnect;
• forming a conductive member over the passivation layer;
• and
• forming a first conductive structure and a second conductive structure on the conductive member, wherein the first conductive structure is physically spaced apart from the second conductive structure and, wherein the first conductive structure is electrically coupled to the second conductive structure by way of the conductive member, wherein a combination of the first conductive structure, the second conductive structure, and conductive member defines a conductive feature that electrically couples the first interconnect and the second interconnect.