Integrated circuit metallization using a titanium/aluminum alloy
AssigneeAgilent Technologies, Inc.
InventorsRicky D. Snyder, Robert G Long, David W Hula, Mark D. Crook
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Abstract
An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.
Claims5
An integrated circuit having a metallization structure, the metallization structure residing on a preexisting dielectric layer of the integrated circuit, the metallization structure comprising:
- a layer of titanium residing on the preexisting layer;
- and
- a layer of aluminum residing on the layer of titanium, the layer of titanium being at least partially alloyed with the layer of aluminum, the integrated circuit being heated sufficiently at 400 degrees C. for about 45 minutes after formation of the metallization structure so that impurities from the dielectric layer have passivated structural defects within a silicon layer of the integrated circuit.
Dependencies are inferred from the claim text.