Semiconductor device and semiconductor module

A semiconductor module comprising:

• a first supporting member provided a conductive pattern;
• a semiconductor device including:
• a semiconductor chip electrically connected to the conductive pattern and integrally molded by an insulating resin in a face-down state;
• a pad electrically connected to a bonding electrode of the semiconductor chip and the conductive pattern, and provided to expose from the insulating resin;
• a heat radiation electrode disposed on the surface of the semiconductor chip and provided to expose from the insulating resin;
• a connecting means which connects the bonding electrode and the pad;
• an opening portion provided in the first supporting member at a location corresponding to the heat radiation electrode;
• and
• a metal plate affixed to the heat radiation electrode in the opening portion,
• wherein the top surface of the heat radiation electrode protrudes beyond the top surface of the pad, and by the amount of this protrusion, the thickness of the connecting means is practically determined.

A semiconductor device comprising:

• a semiconductor chip integrally molded by an insulating resin in a face-down state;
• a pad electrically connected to a bonding electrode of the semiconductor chip;
• an external connection electrode extending via a wiring integral to the pad and provided to expose from the insulating resin;
• a heat radiation electrode disposed on the surface of the semiconductor chip;
• and
• a connecting means which connects the bonding electrode and the pad,
• wherein the top surface of the heat radiation electrode protrudes beyond the top surface of the pad, and by the amount of this protrusion, the thickness of the connecting means is practically determined.

A semiconductor module comprising:

• a first supporting member having a conductive pattern;
• a semiconductor device including:
• a semiconductor chip electrically connected to the conductive pattern and integrally molded by an insulating resin in a face-down state;
• a pad electrically connected to a bonding electrode of the semiconductor chip;
• an external connection electrode provided via a wiring integral to the pad and the conductive pattern, and provided to expose from the insulating resin;
• a heat radiation electrode disposed on the surface of the semiconductor chip and provided to expose from the insulating resin;
• a connecting means which connects the bonding electrode and the pad;
• an opening portion provided in the first supporting member at a location corresponding to the heat radiation electrode;
• and
• a metal plate affixed to the heat radiation electrode in the opening portion,
• wherein the top surface of the heat radiation electrode protrudes beyond the top surface of the pad, and by the amount of this protrusion, the thickness of the connecting means is practically determined.