US 6,646,327 B2 · Semiconductor device and semiconductor device manufacturing method

Abstract

The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film containing a coating insulating film having a low dielectric constant. In construction, there are provided the steps of preparing a substrate 20 on a surface of which a coating insulating film 26 is formed by coating a coating liquid containing any one selected from a group consisting of silicon-containing inorganic compound and silicon-containing organic compound, and forming a protection layer 27 for covering the coating insulating film 26 by plasmanizing a first film forming gas to react, wherein the first film forming gas consists of any one selected from a group consisting of alkoxy compound having Si—H bonds and siloxane having Si—H bonds and any one oxygen-containing gas selected from a group consisting of O2, N2O, NO2, CO, CO2, and H2O.

Claims4

Dependent claims

A semiconductor device comprising:

(i) a substrate having, on at least one surface, a coating of an insulating film containing at least one silicon compound selected from the group consisting of silicon-containing organic compounds and silicon-containing inorganic compounds;
and
(ii) a first protection layer covering and in contact with the insulating film,
wherein the first protection layer covering the insulating film is a silicon-containing insulating film which has a peak absorption intensity of infrared rays in a range of a wave number 2270 to 2350 cm−1, a film density in a range of 2.25 to 2.40 g/cm3, and a relative dielectric constant in a range of 3.3 to 4.3.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

10/126,666Filed 22 Apr 2002 · division

Priority

16 Jul 2001

Published

US 2002/0013066 A112 Sep 2002

Granted

11 Nov 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10P 14/69215
Containing silicon: the material being a silicon oxide, e.g. SiO2
C23C 16/401
Oxides: containing silicon
C23C 16/509
Using radio frequency discharges: using internal electrodes
H10P 14/6342
Deposition processes: liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

Family

Application09/904,868Parent of this division · filed 16 Jul 2001

US 6,420,276 B2Parent of this division · filed 16 Jul 2002

US 2002/0127869 A1Pre-grant publication · published 12 Sep 2002

US 2002/0013066 A1Published application

US 6,646,327 B2This patent

From the US filing history. Foreign family members aren’t listed.

Semiconductor device and semiconductor device manufacturing method

Life of this patent

Semiconductor device and semiconductor device manufacturing method

Life of this patent

Abstract

Claims4