Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
AssigneeAmberWave Systems Corporation
InventorEugene A. Fitzgerald
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Abstract
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
Claims19
A semiconductor structure integrating separate surface channel and buried channel devices, the structure comprising:
- a. a first strained layer;
- b. a second strained layer thereunder;
- c. an intervening spacer layer between and adjacent the first strained layer and the second strained layer;
- d. a surface-channel device having a carrier channel in the first strained layer;
- and
- e. a buried-channel device having a carrier channel in the second strained layer.
The structure of claim 18, wherein the substrate comprises at least one planarized surface.
Dependencies are inferred from the claim text.