Power transistor with internally combined low-pass and band-pass matching stages
AssigneeKoninklijke Philips Electronics N.V.
InventorAnton Willem Roodnat
Life of this patent
Estimating the term…
Abstract
RF power transistor provided with an internal shunt inductor, characterized in that the shunt is produced in two separated, capacitors (Cb, Cp), each internally bonded to the transistor internal active die (AD) through internal leads (Li, Ld1), one of which capacitors (Cp) being connected to the transistor lead (L) by a further bond wire (Ld).
Claims7
RF power transistor provided with an internal shunt inductor characterized in that the shunt is produced in two separate but parallel-connected capacitors (Cb, Cp), each internally bonded to the transistor internal active die (AD) through internal leads (Li, Ld1), one of which capactors (Cp) being connected to the transistor lead (E) by a further bond wire (Ld2).
The transistor according to any of the preceding claims, characterized in that an output impedance is larger than 10Ω.
An electric circuit comprising a transistor according to any of the preceding claims characterized in that the transistors are incorporated in parallel connection at a relatively high ohmic resistance.
Dependencies are inferred from the claim text.