Semiconductor device having isolating region for suppressing electrical noise

A semiconductor device, which includes a semiconductor substrate comprising:

• a first area, which is located in a surface of the substrate and in which an electrical noise is generated;
• a second area, which is located in the surface and to which the electrical noise is transmitted;
• a first isolating region, which is located around the first area;
• a second isolating region, which is located around the first isolating region;
• a third isolating region, which is located around the second area;
• a third area, which is located between the second isolating region and the third isolating region;
• a fourth area, which is located between the first and second isolating regions;
• a field ground area, which is located in the surface, wherein the field ground area is fixed at a predetermined potential when the device is used;
• and
• a first wiring line, which electrically connects the fourth area and the field ground area to fix the fourth area at the predetermined potential when the device is used, wherein the first wiring line is electrically separated from the third area.

A semiconductor device, which includes a semiconductor substrate comprising:

• a first area located in a surface of the substrate and in which an electrical noise is generated;
• a second area located in the surface and to which the noise is transmitted;
• a first isolating region located around the first area;
• a second isolating region located around the first isolating region;
• a third isolating region located around the second area;
• a third area located between the second isolating region and the third isolating region;
• a fourth area located between the first and second isolating regions;
• a field ground area located in the surface, wherein the field ground area is fixed at a predetermined potential when the device is used;
• a first wiring line for electrically connecting the fourth area and the field ground area to fix the fourth area at the predetermined potential when the device is used, wherein the first wiring line is electrically separated from the third area;
• a first contact region located in a surface of the third area;
• and
• a second wiring line for electrically connecting the first contact region and the field ground area to fix the first contact region at the predetermined potential when the device is used.