Back to results
US 6,646,317 B2Granted
High power photodiode
AssigneeNEC Corporation
InventorTakeshi Takeuchi
Life of this patent
Estimating the term…
Abstract
An evanescently coupled photodiode of the invention has a semiconductor substrate 1, a guide layer 3 being greater in refractive index than the semiconductor substrate, and an absorption layer 4 on a partial area of said guide layer formed in it. The mesa width of a PD region in which the absorption layer and the guide layer are formed is made wider at a part where the density of a photoelectric current is higher when the photodiode operates and more narrow at a part where the density of a photoelectric current is lower.
Claims20
An evanescently coupled photodiode comprising;
- a semiconductor substrate,
- a guide layer which is made of a semiconductor material whose band gap wavelength is shorter than a wavelength of an input light, said semiconductor material being larger in refractive index than said semiconductor substrate, and which has said light inputted to it,
- an absorption layer which is made of a semiconductor material whose band gap wavelength is equal to or longer than the wavelength of said input light and which is formed distantly from an input face of said guide layer and in which said input light is evanescent-wave-coupled, and
- a photodiode region for performing a photoelectric conversion on said input light inputted in parallel with respect to a horizontal plane of said semiconductor substrate in an area including at least said guide layer and said absorption layer, wherein;
- a mesa width of said photodiode region is made wider near a first end portion at a side to which said input light is inputted and more narrow near a second end portion at an opposite side to which said input light is inputted.
2 more elements
An evanescently coupled photodiode comprising;
- a semiconductor substrate,
- a guide layer which is made of a semiconductor material whose band gap wavelength is shorter than a wavelength of an input light, said semiconductor material being larger in refractive index than said semiconductor substrate, and which has said light inputted to it,
- an absorption layer which is made of a semiconductor material whose band gap wavelength is equal to or longer than the wavelength of said input light and which is formed distantly from an input face of said guide layer and in which said input light is evanescent-wave coupled, and
- a photodiode region for performing a photoelectric conversion on said input light inputted in parallel with respect to a horizontal plane of said semiconductor substrate in an area including at least said guide layer and said absorption layer, wherein;
- a mesa width of said photodiode region is made wider near a first end portion at a side to which said input light is inputted and more narrow near a second end portion at an opposite side to which said input light is inputted, and is made wider according to a density of a photoelectric current in said photodiode region.
2 more elements
A waveguide photodiode (waveguide semiconductor light receiving element) comprising;
- a semiconductor substrate,
- an absorption layer made of a semiconductor material whose band gap wavelength is equal to or longer than a wavelength of an input light, and
- a photodiode region for performing a photoelectric conversion on said input light inputted in parallel with respect to a horizontal plane of the semiconductor substrate in an area including at least said absorption layer, wherein;
- a mesa width of said photodiode region is made wider near a first end portion at a side to which said input light is inputted and more narrow near a second end portion at an opposite side to which said input light is inputted.
1 more element
A waveguide photodiode (waveguide semiconductor light receiving element) comprising
- a semiconductor substrate,
- an absorption layer made of a semiconductor material whose band gap wavelength is equal to or longer than a wavelength of an input light, and
- a photodiode region for performing a photoelectric conversion on said input light inputted in parallel with respect to a horizontal plane of the semiconductor substrate in an area including at least said absorption layer, wherein;
- a mesa width of said photodiode region is made wider near a first end portion at a side to which said input light is inputted and more narrow near a second end portion at an opposite side to which said input light is inputted, and a mesa width of a part of said photodiode region is made wider according to a density of a photoelectric current in said photodiode region.
1 more element
Dependencies are inferred from the claim text.