Conductive film layer for hall effect device
AssigneeThe United States of America as represented by the Secretary of the Navy
InventorsMark B. Johnson, Gary A. Prinz
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Abstract
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.
Claims14
A Hall effect device comprising:
- a conductive film layer having a top surface and capable of carrying an electrical current;
- a ferromagnetic layer having a configurable magnetization orientation, and covering a first portion of the top surface, and not a second portion, such that a fringe magnetic field substantially normal to such surface can be generated by an edge portion of the ferromagnetic layer;
- wherein an electrical signal can be generated in response to the fringe magnetic field acting on the electrical current in said conductive film layer;
- and
- wherein said conductive film layer is comprised of at least one indium compound selected from the group consisting of indium antimonide, indium arsenide, and indium phosphide.
A Hall effect device comprising:
- a conductive film layer having a top surface and capable of carrying an electrical current;
- a ferromagnetic layer having a configurable magnetization orientation, and covering a first portion of the top surface, and not a second portion, such that a fringe magnetic field substantially normal to such surface can be generated by an edge portion of the ferromagnetic layer;
- wherein an electrical signal can be generated in response to the fringe magnetic field acting on the electrical current in said conductive film layer;
- and
- wherein said conductive film layer is comprised of at least one selected from the group consisting of germanium and silicon germanium.
Dependencies are inferred from the claim text.