Universal semiconductor wafer for high-voltage semiconductor components
AssigneeInfineon Technologies AG
InventorsJenö Tihanyi, Reinhard Ploss
Life of this patent
Estimating the term…
Abstract
A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type. A plurality of floating semiconductor zones of a second, opposite conductivity type are embedded in the interface region between the semiconductor substrate and the at least one layer. The floating semiconductor zones are dimensioned such that the dimension of a semiconductor zone is do small compared to the layer thickness of the at least one semiconductor layer and is essentially equal to or less than a distance between the floating semiconductor zones in the interface region.
Claims13
A universal semiconductor wafer for high-voltage semiconductor components, comprising:
- a semiconductor substrate of a first conductivity type;
- at least one layer of said first conductivity type disposed on said semiconductor substrate;
- said at least one layer having a given layer thickness and forming an interface region between said at least one layer and said semiconductor substrate;
- a plurality of floating semiconductor zones of a second conductivity type different from said first conductivity type, said floating semiconductor zones being embedded in said interface region;
- and
- said floating semiconductor zones being spaced apart from one another by a given distance in said interface region, and at least one of said floating semiconductor zones having a given dimension substantially corresponding at most to said given distance and said given dimension being small compared to said given layer thickness of said at least one layer.
Dependencies are inferred from the claim text.