Electro-optical device and electronic equipment
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hidehito Kitakado, Takeshi Fukunaga
Life of this patent
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Abstract
An electro-optical device having high operation performance and high reliability, and electronic equipment which include the electro-optical device, are provided. A TFT structure that is strong against hot carrier injection is realized by placing an LDD region which overlaps a gate electrode in an n-channel TFT forming a driver circuit. Furthermore, a TFT structure having a low off current value is realized by placing LDD regions which do not overlap a gate electrode in a pixel TFT forming a pixel section. In addition, the electro-optical device has a memory section on the same insulator, the memory section having a memory transistor and storing data.
Claims12
A display device comprising:
- a substrate;
- a current control p-channel thin film transistor provided over said substrate;
- and
- an electroluminescence layer provided over said current control p-channel thin film transistor,
- wherein a channel region of said current control p-channel thin film transistor is provided in a semiconductor film comprising silicon, and said semiconductor film has a {110} plane.
A display device comprising:
- a substrate;
- a channel region provided over said substrate;
- a p-type source and a p-type drain provided over said substrate and sandwiching said channel region;
- a gate electrode provided adjacent to said channel region with a gate insulating film therebetween;
- an anode provided over said substrate and connected with one of said p-type source region and said p-type drain region;
- and
- an electroluminescence layer provided over said anode,
- wherein said channel region is provided in a semiconductor film comprising silicon, and said semiconductor film has a {110} plane.
Dependencies are inferred from the claim text.