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US 6,646,266 B2Granted
Flat panel image sensor
AssigneeSharp Kabushiki Kaisha
InventorYoshihiro Izumi
Life of this patent
Estimating the term…
Abstract
In the present invention, the thickness of an insulating resin 6, in an area Y1 of an active matrix substrate 2 on which a semiconductor film 3 is formed, is equal to the thickness in an area X1 of the active matrix substrate 2 on which the semiconductor film 3 is not formed. On this account, in a flat panel image sensor 1, stress generated inside the insulating resin 6 is reduced, warpage of the active matrix substrate 2 is prevented in advance, and impact resistance of the flat panel image sensor 1 is improved.
Claims16
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- a bias electrode formed on the semiconductor film;
- a first spacer formed on the active matrix substrate so as to surround the semiconductor film;
- an insulating resin formed on surfaces of the semiconductor film, the bias electrode, and the active matrix substrate, and sealed by the first spacer;
- and
- a protective substrate facing the active matrix substrate via the first spacer and covering the insulating film,
- wherein the insulating resin formed on the semiconductor film is as thick as the insulating resin formed on a peripheral part of the active matrix substrate, in which part neither the semiconductor film nor the first spacer is formed.
5 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- a bias electrode formed on the semiconductor film;
- a spacer formed on the active matrix substrate so as to surround the semiconductor film;
- an insulating resin formed on the semiconductor film and sealed by the spacer;
- and
- a protective substrate facing the active matrix substrate via the spacer and covering the insulating film,
- wherein the spacer is formed to cover a whole part of the active matrix substrate, in which part the semiconductor film is not formed, and also is formed to be thicker than the semiconductor film.
5 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- a bias electrode formed on the semiconductor film;
- a first spacer formed on the active matrix substrate so as to surround the semiconductor film without touching the film;
- an insulating resin formed on surfaces of the semiconductor film, the bias electrode, and the active matrix substrate, and sealed by the first spacer;
- and
- a protective substrate facing the active matrix substrate via the first spacer and covering the insulating film,
- wherein a second spacer is formed on a whole part of the active matrix substrate, in which part neither the semiconductor film nor the first spacer is formed.
5 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- a bias electrode formed on the semiconductor film;
- a first spacer formed on the active matrix substrate so as to surround the semiconductor film without touching the film;
- an insulating resin formed on surfaces of the semiconductor film, the bias electrode, and the active matrix substrate, and sealed by the first spacer;
- and
- a protective substrate facing the active matrix substrate via the first spacer and also covering the insulating film,
- wherein a pit part is formed in a whole part of the protective substrate, in which part the protective substrate faces the semiconductor film.
5 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- a first spacer formed on the active matrix substrate so as to surround the semiconductor film;
- and
- an insulating resin formed on surfaces of the semiconductor film and the active matrix substrate, and sealed by the first spacer,
- wherein the insulating resin formed on the semiconductor film is as thick as the insulating resin formed on a peripheral part of the active matrix substrate, in which area neither the semiconductor film nor the first spacer is formed.
3 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- a spacer formed on the active matrix substrate so as to surround the semiconductor film;
- and
- an insulating resin formed on a surface of the semiconductor film, and sealed by the spacer,
- wherein the spacer covers a whole part of the active matrix substrate, in which part the semiconductor film is not formed, and also is formed to be thicker than the semiconductor film.
3 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- and
- a first spacer formed on the active matrix substrate so as to surround the semiconductor film without touching the film;
- wherein a second spacer is formed on a whole part of the active matrix substrate, in which part neither the semiconductor film nor the first spacer is formed.
2 more elements
A flat panel image sensor, comprising:
- an active matrix substrate;
- a semiconductor film formed on the active matrix substrate;
- and
- a protective substrate provided to face the active matrix substrate,
- wherein a pit part is formed in a whole part of the protective substrate, in which part the protective substrate faces the semiconductor film.
2 more elements
Dependencies are inferred from the claim text.