US 6,645,885 B2Granted

Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD)

AssigneesNational University of Singapore, Institute of Materials Research and Engineering

InventorsSoo Jin Chua, Peng Li, Maosheng Hao, Ji Zhang

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Abstract

Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple InxGa1−xN/InyGa1−yN quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during MOCVD growth, wherein the photoluminescence wavelength from these dots ranges from 480 nm to 530 nm. Controlled amounts of TMIn and/or other Indium precursors are important in triggering the formation of dislocation-free QDs, as are the subsequent flows of ammonia and TMIn. This method can be readily used for the growth of the active layers of blue and green light emitting diodes (LEDs).

Claims10

Dependent claims

A method for fabricating a device that emits light in blue or green wavelengths:

i) providing a substrate comprising a surface layer of a group III-nitride, maintaining the substrate at a temperature ranging from 700° C. to 850° C., and forming a layer of InxGa1−xN, wherein x ranges from 0 to 0.10, over the substrate;
ii) maintaining the substrate at about the temperature of step i), and flowing indium-precursor at a flow rate of less than 100 μmol/min between 2 and 5 seconds, and N-precursor over the layer of InxGa1−xN to form quantum dots of InwGa1−wN, wherein w>0.20;
iii) maintaining the substrate at about the temperature of step i), and forming a well layer of InyGa1−yN, wherein y is greater than x, over the quantum dots;
iv) maintaining the substrate at about the temperature of step i), and forming a first cap layer of InzGa1−zN, wherein z ranges from 0 to 0.10, over the well layer;
v) forming a second cap layer of GaN or AlGaN over the first cap layer;
thereby obtaining a device that emits light in blue or green wavelengths.

3 more elements

Dependencies are inferred from the claim text.