Film forming method, semiconductor device and manufacturing method of the same
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorsYouichi Yamamoto, Hiroshi Ikakura, Tomomi Suzuki, Yuichiro Kotake, Yoshimi Shioya, Kouichi Ohira, Shoji Ohgawara, Kazuo Maeda
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Abstract
The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N2) to a major deposition gas component consisting of siloxane and N2O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film 25,27, or 28 on a substrate targeted for film formation.
Claims14
A film forming method comprising the steps of:
- adding at least one diluting gas selected from the group consisting of an inert gas and a nitrogen gas (N2) to a major deposition gas consisting of siloxane and N2O to form a resultant deposition gas;
- converting the resultant deposition gas, consisting of siloxane, N2O and the diluting gas, into plasma;
- and
- allowing the deposition gas converted into plasma to react, and thus forming an insulating film on a substrate targeted for film formation.
A method of manufacturing a semiconductor device, comprising the steps of:
- providing a substrate as a target for film formation, the substrate having at least a base insulating film exposed thereon;
- adding at least one diluting gas selected from the group consisting of an inert gas and a nitrogen gas (N2) to a major deposition gas consisting of siloxane and N2O to form a resultant deposition gas;
- converting the resultant deposition gas, consisting of siloxane, N2O and the diluting gas, into plasma;
- and
- allowing the deposition gas converted into plasma to react, and thus forming an insulating film on the substrate.
A method of manufacturing a semiconductor device comprising the steps of:
- providing a substrate as a target for film formation, the substrate having at least a base insulating film exposed thereon;
- adding at least one diluting gas selected from the group consisting of an inert gas and a nitrogen gas (N2) to a major deposition gas consisting of siloxane and N2O to form a resultant deposition gas;
- converting the resultant deposition gas, consisting of siloxane, N2O and the diluting gas, into plasma;
- allowing the deposition gas converted into plasma to react, and thus forming an insulating film on the substrate targeted for film formation;
- forming a via hole or a wiring trench in the insulating film;
- and
- embedding a copper film in the via hole or the wiring trench to form a connecting conductor or a wiring.
Dependencies are inferred from the claim text.