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US 6,645,881 B2Granted
Method of forming coating film, method of manufacturing semiconductor device and coating solution
AssigneesKabushiki Kaisha Toshiba, Jsr Corporation
InventorsNobuhide Yamada, Rempei Nakata, Makoto Sugiura, Mutsuhiko Yoshioka, Takahiro Kitano, Shinji Kobayashi
Life of this patent
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Abstract
A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.
Claims16
A method of forming a coating film, comprising:
- forming a coating solution film on a substrate by discharging a coating solution comprising a coating film-forming material dissolved in a solvent onto said substrate through a nozzle while relatively moving said nozzle and said substrate, said coating solution containing a low vapor pressure solvent having a vapor pressure of less than 1 Torr (133.322 Pa) at room temperature;
- and
- removing the solvent contained in said coating solution film.
Dependencies are inferred from the claim text.