US 6,645,879 B2 · Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same

Abstract

Disclosed are methods for forming a silicon oxide layer of a semiconductor device capable of insulating between fine conductive patterns without causing a process failure, and for forming a wiring having the silicon oxide layer. After forming conductive patterns on a semiconductor substrate, an anti-oxidation layer is sequentially formed on the conductive patterns and on the semiconductor substrate. The anti-oxidation layer prevents an oxidant from penetrating into the conductive patterns and the semiconductor substrate. A reflowable oxide layer is formed by coating a reflowable oxidizing material on the anti-oxidation layer while burying the conductive patterns. The silicon oxide layer is formed by thermally treating the reflowable oxide layer. Then, the silicon oxide layer filled between conductive patterns and the anti-oxidation layer exposed to the semiconductor substrate are etched so as to form a contact hole, thereby forming the wiring of the semiconductor device. Thus, a planar silicon oxide layer is formed between conductive patterns having a fine interval therebetween without creating a void. In addition, a metal layer pattern, which acts as a conductor in the conductive patterns, can be prevented from being oxidized when the silicon oxide layer is formed.

Claims26

Dependent claims

A method for forming an insulating layer in a semiconductor device, the method comprising the steps of:

i) forming a plurality of conductive patterns on a semiconductor substrate;
ii) sequentially forming an anti-oxidation layer on the conductive patterns and on the semiconductor substrate for preventing an oxidant from penetrating into the conductive patterns and the semiconductor substrate;
iii) forming a reflowable oxide layer by coating a reflowable oxide material on the conductive patterns having the anti-oxidation layer formed thereon while burying the conductive patterns;
and
iv) forming a silicon oxide layer by thermally treating the reflowable oxide layer.

2 more elements

A method for forming a wiring in a semiconductor device, the method comprising the steps of;

i) forming an insulating layer including a plurality of first conductive patterns therein on a semiconductor substrate;
ii) forming second conductive patterns on the insulating layer corresponding to upper portions of spaces formed between first conductive patterns;
iii) forming a nitride layer spacer at sidewalls of the second conductive patterns;
iv) forming a first preliminary contact hole for exposing an upper surface of the first conductive patterns by performing an anisotropic etching process using the nitride layer spacer as an etching mask;
v) sequentially forming an anti-oxidation layer on an upper surface of the second conductive pattern, an upper surface of the insulating layer, and a sidewall and a bottom surface of the first preliminary contact hole, for preventing an oxidant from penetrating thereto;
vi) forming a reflowable oxide layer by coating a reflowable oxide material on the anti-oxidation layer while burying the first preliminary contact hole;
vii) forming a silicon oxide layer by thermally treating the reflowable oxide layer;
viii) forming a second preliminary contact hole by anisotropically etching a predetermined portion of the silicon oxide layer, thereby exposing the anti-oxidation layer formed on the bottom surface of the first preliminary contact hole;
ix) etching the exposed anti-oxidation layer, thereby forming a contact hole for exposing the upper surface of the first conductive patterns;
and
x) filling conductive materials in the contact hole.

8 more elements

Dependencies are inferred from the claim text.

Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same

Life of this patent

Method of forming a silicon oxide layer of a semiconductor device and method of forming a wiring having the same

Life of this patent

Abstract

Claims26