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US 6,645,873 B2Granted
Method for manufacturing a semiconductor device
AssigneeASM Japan K.K.
InventorsAkira Shimizu, Fumitoshi Ozaki
Life of this patent
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Abstract
A method of processing a semiconductor substrate involves etching a SiOF layer with HF or HF+H2O. The method can be used to form hollow structures in semiconductor substrates and thus provides a way to make interlayer insulators.
Claims12
A method of processing a semiconductor substrate, comprising:
- providing a semiconductor substrate disposed within a chamber, wherein the semiconductor substrate comprises a SiOF film as a sacrificial layer and at least one other silicon oxide film, and
- selectively etching and removing the SiOF film rather than said at least one other silicon oxide film by placing said SiOF film and said at least one other silicon oxide film in contact with a gas comprising HF substantially without H2O added thereto to accomplish the selectivity.
A method of processing a semiconductor substrate, comprising:
- providing a chamber comprised of an inner wall;
- providing a semiconductor substrate disposed within the chamber, wherein the semiconductor substrate comprises a SiOF film as a sacrificial layer and at least one other silicon oxide film, and
- selectively etching and removing the SiOF film rather than said at least one other silicon oxide film by placing said SiOF film and said at least one other silicon oxide film in contact with a gas comprising HF at a temperature about 0° C. to about 500° C. higher than the temperature of the inner wall, said gas comprising substantially no H2O added thereto to accomplish the selectivity of the SiOF film rather than said at least one other silicon oxide film, by a process comprising introducing the gas to the chamber, maintaining the gas in the chamber at a fixed pressure for a fixed period of time, and removing the gas from the chamber.
Dependencies are inferred from the claim text.