Process for fabricating semiconductor device
AssigneeHitachi, Ltd.
InventorsNobuyuki Negishi, Masaru Izawa
Life of this patent
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Abstract
Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high resistivity layer in the formation of a contact hole, thereby reducing a contact resistance. The contact hole is formed in an etching step of reducing ion energy and an oxygen flow rate as an etching depth progresses, thereby suppressing the damage layer formed on the base. The reduction of the contact resistance is achieved by using a step of removing the high resistivity layer using hydrogen or a hydrogen-containing gas plasma.
Claims14
A method for fabricating a semiconductor device, comprising the steps of:
- (a) forming a plurality of contact holes in an insulating film formed on a major surface of a semiconductor substrate by dry etching;
- (b) cleaning inside said contact holes by applying high frequency power to said semiconductor substrate and using a reducing gas consists of at least one of NH3, H2 and N2H4, or a gas mixture of at least one of NH3 and N2H4 and at least one of Ar, He, Xe, Ne and Kr;
- and
- (c) burying a semiconductor or conductor in said contact holes in said insulating film.
A method for fabricating a semiconductor device, comprising the steps of:
- forming an interlayer insulating film on a substrate having a semiconductor layer or a conductor layer on a major surface;
- forming on said interlayer insulating film a mask having an opening located above aid semiconductor layer or said conductor layer;
- selectively etching aid interlayer insulating film through said opening of said mask in an environment in which a gas containing a fluorocarbon gas and oxygen gas is excited in a plasma state, thereby forming an opening in said interlayer insulating film through which a surface of said semiconductor layer or said conductor layer is exposed;
- processing said surface of said semiconductor layer or said conductor layer exposed through said opening of said interlayer insulating film by applying said substrate with a bias for accelerating ions in an environment of a reducing gas being excited in a plasma state;
- and
- burying a semiconductor or conductor in said opening of said interlayer insulating film.
A method for fabricating a semiconductor device using semiconductor processing equipment having a vacuum chamber arranged to be vacuum-pumped by vacuum pump means, gas feeding means for feeding a source gas into said vacuum chamber, means for holding a specimen to be treated and means for supplying high frequency power, comprising the steps of:
- placing a semiconductor substrate having an insulating film on a major surface n said means for holding said specimen to be treated;
- and
- transforming said gas, fed into said vacuum chamber by said gas feeding means, into a plasma and selectively etching said insulating film wit said plasma, thereby forming a contact hole in said insulating film, while reducing ion energy during etching.
A method for fabricating a semiconductor device comprising the steps of:
- forming a contact hole in an insulating film formed on a major surface of a semiconductor substrate using a mask by dry etching;
- of removing said mask by ashing using an oxygen gas;
- and
- removing a high resistivity layer exposed at a bottom portion of aid contact hole by applying high frequency power to said semiconductor substrate and using a reducing as consists of at least one of NH3, H2 and N2H4, or a gas mixture of at leas one of NH3 and N2H4 and at least one of Ar, He, Xe, Ne and Kr.
Dependencies are inferred from the claim text.