US 6,645,859 B1 · Semiconductor device and manufacturing method thereof

Abstract

A manufacturing method of a semiconductor device allowing successful filling of an insulating film by HDP-CVD (High Density Plasma-Chemical Vapor Deposition) in a gap or valley between densely placed interconnections is provided. The method includes the steps of forming semiconductor elements on a semiconductor substrate, forming on the semiconductor elements a plurality of interconnections with top protective layers side by side to electrically connect the semiconductor elements, forming a protective insulating film by CVD other than HDP-CVD to cover top and side surfaces of the interconnections and a bottom surface of a gap between the interconnections, and forming an insulating film by HDP-CVD to cover the protective insulating film and to fill in the gap between the interconnections covered with the protective insulating film.

Claims6

Dependent claims

A manufacturing method of a semiconductor device, comprising the steps of:

forming semiconductor elements on a semiconductor substrate;
forming on said semiconductor elements a plurality of interconnections side by side for electrically connecting said semiconductor elements to each other, each said interconnection having a top protective layer on top surface thereof;
forming a protective insulating film by chemical vapor deposition other than high density plasma chemical vapor deposition, to cover top and side surfaces of said interconnections and a bottom surface of a gap between said interconnections;
and
forming an insulating film by high density plasma chemical vapor deposition, to cover said protective insulating film and to fill in the gap between said interconnections covered with said protective insulating film.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/170,579Filed 14 Jun 2002

Priority

JP 2002-0000764 Jan 2002

Granted

11 Nov 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10P 14/662
Characterised by the type of materials: laminate layers, e.g. stacks of alternating high-k metal oxides
H10P 14/6334
Deposition from the gas or vapour phase: using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
H10W 20/075
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: of multilayered…
H10W 20/077
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: on sidewalls or on…

Semiconductor device and manufacturing method thereof

Life of this patent

Semiconductor device and manufacturing method thereof

Life of this patent

Abstract

Claims6