Formation of a vertical junction throuph process simulation based optimization of implant doses and energies
AssigneeNational Semiconductor Corporation
InventorPeter J. Hopper
Life of this patent
Estimating the term…
Abstract
A substantially vertical isolation junction between semiconductor devices is provided. The substantially vertical junction between a P-doped region and an N-doped region allows the P-doped region to be adjacent to the N-doped region with a lateral stagger with a width that is less than 0.1 of the depth. The substantially vertical junction is created by placing a first mask over part of a substrate. A first series of implants of a first dopant is implanted in the substrate. The first mask is removed and a second mask is placed over part of the substrate. A second series of implants of a second dopant of a second conductivity is then implanted in the substrate. A substantially vertical junction results.
Claims13
A junction between a region of a first conductivity type and a region of a second conductivity type in a substrate, formed by the process comprising:
- forming a first mask over a part of a surface of the substrate;
- providing a first series of dopings of a first conductivity type;
- removing the first mask;
- forming a second mask over a part of the surface of the substrate, wherein part of the surface covered by the first mask is not covered by the second mask and wherein part of the surface covered by the second mask was not covered by the first mask;
- and
- providing a second series of doping of a second conductivity type, wherein the first series of dopings and the second series of dopings form a substantially vertical junction.
Dependencies are inferred from the claim text.