Method of improving the fabrication of etched semiconductor devices

A process for improving the fabrication of etched semiconductor devices, comprising the steps of:

• a) depositing a hydrocarbon planarization material over a substrate;
• b) depositing an adhesion promoter over the hydrocarbon planarization material;
• and
• c) patterning the adhesion promoter so as to form an adhesion promoter seal, the seal extending from a first surface of the hydrocarbon planarization material to a first surface of the substrate, the seal passing along an edge of the adhesion promoter and an edge of the hydrocarbon planarization material.

A process for improving the fabrication of etched semiconductor devices, comprising the steps of:

• a) depositing a first layer of an adhesion promoter over a substrate and patterning the adhesion promoter to form a first mesa of adhesion promoter over the substrate;
• b) depositing a second layer of adhesion promoter over the first mesa and over the substrate, the second layer of adhesion promoter forming a second mesa;
• c) depositing a hydrocarbon planarization material over the second layer of adhesion promoter and defining the hydrocarbon planarization material so that at least a portion of a first surface of the second mesa is exposed;
• d) depositing a third layer of adhesion promoter over the hydrocarbon planarization material, over the second mesa and over the substrate;
• e) defining a first mask and etching back the third layer of adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material;
• and
• f) depositing a first metal over the adhesion promoter pad.