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US 6,645,839 B2Granted
Method for improving a doping profile for gas phase doping
AssigneeInfineon Technologies AG
InventorsMoritz Haupt, Anja Morgenschweis, Dietmar Ottenwälder, Uwe Schröder
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Abstract
A method for improving a doping profile using gas phase doping is described. In the method, silicon nitride and/or products of decomposition from a silicon nitride deposition are introduced in a process chamber before or during the actual gas phase doping. This allows the doping profile to be significantly improved.
Claims11
A method for improving a doping profile, which comprises the steps of:
- providing and preparing a semiconductor substrate;
- introducing in a process chamber at least one of silicon nitride and products of decomposition from a silicon nitride deposition;
- and
- carrying out a gas phase doping in the process chamber.
1 more element
Dependencies are inferred from the claim text.