Back to results
US 6,645,836 B2Granted
Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbon
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYoshihiko Kanzawa, Katsuya Nozawa, Tohru Saitoh, Minoru Kubo
Life of this patent
Estimating the term…
Abstract
A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and Sic microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.
Claims10
A method for fabricating a semiconductor wafer, comprising the steps of:
- (a) depositing a SiGeC crystal layer on a Si substrate, the SiGeC crystal layer having each lattice constant in the plane parallel to the Si substrate that matches with a lattice constant of the Si substrate;
- (b) phase-separating the SiGeC crystal layer into SiC microcrystals and a matrix SiGeC crystal layer by annealing the Si substrate, and increasing a lattice constant in the plane of the matrix SiGeC crystal layer to become greater than the lattice constant of the Si substrate;
- and
- (c) growing a strained Si crystal layer on the matrix SiGeC crystal layer, a lattice constant in the plane of the strain Si crystal layer is the same as the lattice constant in the plane of the matrix SiGeC crystal layer.
1 more element
Dependencies are inferred from the claim text.