Semiconductor film forming method and manufacturing method for semiconductor devices thereof

A manufacturing method for a semiconductor film, comprising:

• forming a mask having an aperture exposing a substrate surface on the substrate, said mask comprising at least one type from among silicon oxide, silicon nitride, and silicon oxygen-nitride,
• forming a silicon semiconductor film by selective crystalline growth by means of catalytic chemical vapor deposition on said substrate surface exposed inside said aperture of said mask, and
• performing a treatment on said semiconductor film and forming semiconductor devices on said film
• wherein after forming said mask, a gate is formed on said silicon substrate surface exposed inside the aperture of the mask, and afterwards silicon is made to selectively develop by means of catalytic chemical vapor deposition to form a silicon epitaxial film on said silicon substrate surface exposed inside the aperture of the mask, and then said silicon epitaxial film is doped with impurities to form source and drain regions.