Method for manufacturing annealed wafer and annealed wafer
AssigneeShin-Etsu Handotai Co., Ltd.
InventorShoji Akiyama
Life of this patent
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Abstract
Provided is a manufacturing process for an annealed wafer capable of elucidating a relationship between a tilt angle from a (100) plane of a wafer to be annealed and haze to set optimal tilt angles for suppression of haze and to improve a characteristic of a device from the annealed wafer as a result of the suppression of haze. A silicon mirror wafer having a surface orientation with a tilt angle in the range of 0.1 degree<θ<0.2 degree from a (100) plane or a plane equivalent thereto is heat treated in an atmosphere of hydrogen gas, an inert gas, nitrogen gas or a mixed gas thereof.
Claims4
A manufacturing process for an annealed wafer comprising the steps of:
- preparing a silicon mirror wafer having a surface orientation with a tilt angle θ in the range of 0.1 degree<θ<0.2 degree from a (100) plane or a plane equivalent thereto;
- and
- heat-treating the silicon mirror wafer in an atmosphere of hydrogen gas, an inert gas, nitrogen gas or a mixed gas thereof.
Dependencies are inferred from the claim text.