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AssigneeMax-Planck-Gesellschaft zur Foerderung der Wissenschaften e. V.
InventorRolf Brendel
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The invention relates to a method of manufacturing layer-like structures in which a material layer having hollow cavities, preferably a porous material layer, is produced on or out of a substrate consisting, for example, of monocrystalline p-type or n-type Si and in which the layer-like structure, or a part of it, is subsequently provided on the cavity exhibiting or porous material layer. The layer-like structure, or a part of it, is subsequently separated from the substrate using the layer having the hollow cavities, or porous layer, as a point of desired separation, for example through the production of a mechanical strain within or at a boundary surface of the cavity exhibiting or porous layer. The method is characterized in that the surface of the substrate is structured prior to the production of the porous layer, or in that the surface of the porous layer is structured.
A method of manufacturing a layer-like structure in which a cavity exhibiting or porous layer is produced on a crystalline semiconductor substrate and wherein the layer-like structure is subsequently provided on the cavity exhibiting or porous layer and is subsequently separated from the substrate using the cavity exhibiting or porous layer as a position of intended separation, the surface of the substrate being structured prior to the generation of the cavity exhibiting or porous layer and the structure of the surface of the substrate being preserved after separation of said layer-like structure from the cavity exhibiting or porous layer.
A method for the manufacture of a substrate comprising a carrier layer and a porous layer of silicon or of another semiconductor material provided thereon, wherein a cylindrical bar consisting of a single crystal semiconductor material is continuously treated at its surface to produce a porous surface layer, a jacket surface of the bar being dipped during a rotation about the cylinder axis into an HF bath and an electrical potential drop is produced with corresponding flow of current from the bar to an electrode arranged in the HF bath, while the porous surface layer which is produced is continuously drawn off from the bar by a carrier layer which is continuously applied to the porous surface, and a layer-like structure is subsequently grown onto the porous surface layer.
A method of manufacturing layer-like structures in which a cavity exhibiting or porous layer is produced on or from a substrate, wherein an uppermost layer of the cavity exhibiting or porous layer, is melted, at least in places, and is subsequently caused to solidify for the production of a single crystal non-porous layer and the solidified layer is subsequently separated from the substrate using the cavity exhibiting or porous layer, as a position of intended separation, or at a boundary surface of the cavity exhibiting or porous layer.
A method of producing a semiconductor circuit, using a method of manufacturing a layer-like structure in which a cavity exhibiting or porous layer is produced on a crystalline semiconductor substrate and wherein the layer-like structure is subsequently provided on the cavity exhibiting or porous layer and is subsequently separated from the substrate using the cavity exhibiting or porous layer as a position of intended separation, the surface of the substrate being structured prior to the generation of the cavity exhibiting or porous layer and the structure of the surface of the substrate being preserved after separation of said layer-like structure from the cavity exhibiting or porous layer wherein a shadow mask is arranged in front of the substrate during the manufacture of the layer-like structure and transverse to the transport direction of the atoms to be deposited and is used to control the growth of the layer-like structure.
A method of manufacturing a substrate for semiconductor epitaxy, wherein a cavity exhibiting or porous layer is generated out of or applied onto a first substrate, a second substrate is applied onto a free surface of the cavity exhibiting or porous layer and subsequently separates the second substrate from the first substrate using the cavity exhibiting or porous layer as a position of intended fracture by the production of a mechanical strain such that a layer or sections of the cavity exhibiting or porous layer remains or remain adhered to the second substrate, whereby the second substrate can be used for epitaxial methods, wherein the first substrate or the cavity exhibiting or porous layer is structured prior to the separation of the second substrate from the first substrate, wherein the layer or sections of the cavity exhibiting or porous layer adhered to the second substrate is further prepared to form regions of porous material and regions which are free of porous material on said surface.
A method of manufacturing a substrate for semiconductor epitaxy, wherein a cavity exhibiting or porous layer is generated out of or applied onto a first substrate, a second substrate is applied onto a free surface of the cavity exhibiting or porous layer and subsequently separates the second substrate from the first substrate using the cavity exhibiting or porous layer as a position of intended fracture by the production of a mechanical strain such that a layer or sections of the cavity exhibiting or porous layer remains or remain adhered to the second substrate, whereby the second substrate can be used for epitaxial methods, wherein the total structure is dipped into an etching solution containing HF for the separation of the second substrate from the first substrate, the etching solution penetrates the cavity exhibiting or porous material and holes are made available, whereby the porosity is increased in the cavity exhibiting or porous layer for the separation of the second substrate from the first substrate.
Dependencies are inferred from the claim text.