Thermally stable crystalline defect-free germanium bonded to silicon and silicon dioxide
AssigneeIntel Corporation
InventorsMohamad A. Shaheen, Beenyih Jin, Robert S. Chau
Life of this patent
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Abstract
A wafer pair comprising a substantially defect-free germanium wafer and methods of making the same. The wafer pair comprises the substantially defect-free germanium wafer directly bonded to a silicon wafer. The method of making the wafer pair comprises placing the silicon wafer in a wafer-bonding chamber, placing the germanium wafer on top or on bottom of the silicon wafer, and applying a local force to either the germanium wafer or to the silicon wafer to initiate bonding of the germanium wafer to the silicon wafer. The bonding occurs under a temperature ranging from about 23° C. to about 600° C. and under a vacuum condition inside a wafer-bonding chamber.
Claims25
A method of forming a substantially defect-free germanium film on a semiconductor wafer comprising:
- treating a semiconductor wafer to provide said semiconductor wafer with a first hydrophilic surface;
- placing said semiconductor wafer in a wafer-bonding chamber;
- treating a germanium wafer to provide said germanium wafer with a second hydrophilic surface;
- placing said germanium wafer on top of or on bottom of said semiconductor wafer, said first hydrophilic surface facing said second hydrophilic surface;
- and
- applying a local force to one of said germanium wafer and said semiconductor wafer to initiate bonding of said germanium wafer to said semiconductor wafer, said bonding forms a wafer pair.
A method of forming a substantially defect-free germanium film on a semiconductor wafer comprising:
- cleaning a silicon wafer to provide said silicon wafer with a first hydrophilic surface;
- cleaning a germanium wafer to provide said germanium wafer with a second hydrophilic surface;
- placing said silicon wafer in a wafer-bonding chamber;
- placing said germanium wafer on top or on bottom of said silicon wafer, said first hydrophilic surface facing said second hydrophilic surface;
- applying a local force to a region near an edge of one of said germanium wafer and said silicon wafer to initiate bonding of said germanium wafer to said silicon wafer, said bonding forming a wafer pair;
- and
- annealing said wafer pair after said germanium wafer is bonded to said silicon wafer.
A method of forming a substantially defect-free germanium film on a semiconductor wafer comprising:
- treating a semiconductor wafer to provide said semiconductor wafer with a first hydrophilic surface;
- placing said semiconductor wafer in a wafer-bonding chamber;
- treating a germanium wafer to provide said germanium wafer with a second hydrophilic surface;
- placing said germanium wafer on top of or on bottom of said semiconductor wafer, said first hydrophilic surface facing said second hydrophilic surface;
- introducing a moisture containing carrier gas into said wafer-bonding chamber;
- and
- applying a local force to one of said germanium wafer and said semiconductor wafer to initiate bonding of said germanium wafer to said semiconductor wafer, said bonding forms a wafer pair.
Dependencies are inferred from the claim text.