Method for forming isolation regions on semiconductor device
AssigneeOki Electric Industry Co., Ltd.
InventorToshiyuki Nakamura
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Abstract
A method for forming isolation regions on a semiconductor substrate, includes partially covering the surface of the semiconductor substrate with oxidation inhabiting films, and heat-treating the portions of the semiconductor substrate which are exposed from the oxidation inhabiting films. The heat treatment consists of a wet-type heating step in a gaseous atmosphere containing oxygen and hydrogen, and a dry-type heating step in a atmosphere without hydrogen which is performed after the wet-type heating step.
Claims26
A method for forming an isolation region made of a field oxide file generated by performing a thermal oxidation process on an exposed region of a surface of a semiconductor substrate revealed through an opening of an oxidation inhabiting film under the condition that said surface is partially covered by said oxidation inhabiting film, said thermal oxidation process comprising:
- a first heat treatment during which said semiconductor substrate is heated to a first temperature in a gaseous atmosphere containing oxygen and hydrogen, wherein a flow rate of hydrogen is less than a flow rate of oxygen;
- heating said semiconductor substrate to a second temperature without hydrogen;
- and
- a second heat treatment after said semiconductor substrate is heated to the second temperature, said heat treatment in a gaseous atmosphere containing oxygen without hydrogen.
A method of forming a field oxide isolation region in a substrate through an opening of an oxidation inhabiting film formed on the substrate, comprising:
- removing substantially all residual particles of the oxidation inhabiting film from the substrate in the opening of the oxidation inhabiting film and initiating growth of a field oxide in the opening, by a first heating treatment during which the substrate is heated to a first temperature in a gaseous atmosphere containing oxygen and hydrogen, wherein a flow rate of hydrogen is less than a flow rate of oxygen during the first heat treatment;
- heating the substrate to a second temperature without hydrogen;
- and
- completing growth of the field oxide in the opening by a second heat treatment after the substrate is heated to the second temperature, the second heat treatment in a gaseous atmosphere containing oxygen without hydrogen.
Dependencies are inferred from the claim text.