Back to results
US 6,645,807 B2Granted
Method for manufacturing semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkihiko Tsuzumitani, Yasutoshi Okuno, Toshihiko Nagai
Life of this patent
Estimating the term…
Abstract
After a metal layer is formed on a dielectric film, the metal layer is subjected to an oxidation process using a liquid having oxidizing power, thereby forming an adhesion layer. Then, an electrode or wiring is formed on the adhesion layer.
Claims8
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a metal layer on a dielectric film;
- forming an adhesion layer composed of a metal oxide by subjecting the metal layer to an oxidation process using a liquid having oxidizing power;
- and
- forming an electrode or a wiring on the adhesion layer,
- wherein the electrode or the wiring is in contact with the metal oxide composing the adhesion layer.
2 more elements
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a metal layer on a dielectric film;
- forming an adhesion layer composed of a metal oxide by subjecting the metal layer to an oxidation process using a liquid having oxidizing power;
- forming a first electrode on the adhesion layer;
- forming a capacitance dielectric film on the first electrode;
- and
- forming a second electrode on the capacitance dielectric film,
- wherein the first electrode is in contact with the metal oxide composing the adhesion layer.
4 more elements
Dependencies are inferred from the claim text.