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US 6,645,800 B2Granted
Method for the production of a field-effect structure
AssigneeRobert Bosch GmbH
InventorsWilhelm Frey, Franz Laermer, Klaus Heyers
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Abstract
In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.
Claims13
A method for producing a field-effect structure having a movable gate structure above a gate region, comprising the steps of:
- providing a substrate having a drain, a source and the gate region arranged therebetween, the gate region being covered with a gate oxide;
- creating a germanium sacrificial layer on the gate region;
- creating a structure for the movable gate structure made of silicon-germanium on the sacrificial layer;
- and
- etching the sacrificial layer.
2 more elements
Dependencies are inferred from the claim text.