Light-emitting semiconductor device using group III nitride compound

A method for producing a group III nitride compound semiconductor light-emitting device comprising:

• producing an emission layer comprising a multi quantum well structure (MQW) with well layers and barrier layers, and
• doping at least one of a donor impurity and an acceptor impurity into at least one of said well layers and barrier layers in a producing process of said multi quantum well structure,
• wherein said multi quantum well structure (MQW) comprises alternating Gax1In1−x1N well layers and Gay1In1−y1N barrier layers, a band gap of said barrier layers being wider than a band gap of said well layers, where 0≦x1≦1 and 0≦x2≦1 and
• wherein said barrier layers comprise gallium nitride (GaN).

A method or producing a group III nitride compound semiconductor light-emitting device comprising:

• producing an emission layer comprising a multi quantum well structure (MQW) with well layers and barrier layers, and
• doping at least one of donor impurity and an acceptor impurity into at least one of said well layers and barrier layers in a producing process of said multi quantum well structure,
• wherein said multi quantum well structure (MQW) comprises alternating Gax1In1−x1N well layers and Gay1In1−y1N barrier layers, a band gap of said barrier layers being wider than a band gap of said well layers, where 0≦x1≦1 and 0≦x2≦1 and
• wherein said at least on of said well layers and barrier layers is doped with an impurity concentration ranging from 1×1017/cm3 to 5×1018/cm3.