Thinner for rinsing photoresist and method of treating photoresist layer
AssigneeSamsung Electronics Co., Ltd.
InventorsHong-Sick Park, Jin-Ho Ju, Yu-Kyung Lee, Sung-Chul Kang, Sae-Tae Oh, Doek-Man Kang
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Abstract
A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.
Claims9
A thinner for rinsing photoresist comprising:
- 50 to 80 wt % of n-butyl acetate;
- propylene glycol alkyl ether;
- and
- propylene glycol alkyl ether acetate.
A method of treating a photoresist layer, comprising the steps of:
- coating a photoresist composition on a substrate, the photoresist composition including a polymer compound, a photosensitive compound, and a solvent;
- rinsing the photoresist layer with a thinner for rinsing photoresist, the thinner including 50 to 80 wt % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate n-butyl acetate.
A method of producing a liquid crystal display or semiconductor circuit, comprising the steps of:
- (a) coating a photoresist composition on a substrate for a liquid crystal display or a semiconductor, the photoresist composition including a polymer compound;
- a photosensitive compound, and a solvent
- (b) soft-baking, wherein the coated substrate is heated to evaporate the solvent from the composition and to produce a photoresist layer on the substrate;
- (c) selectively exposing the soft-baked substrate through a mask to produce a pattern;
- (d) developing, wherein the exposed substrate is dipped into a developing aqueous solution to dissolve an exposed or unexposed photoresist layer
- (e) hard-baking, wherein the developed photoresist layer is heat-treated;
- (f) etching the hard-baked substrate to produce a circuit pattern and to strip the residual photoresist;
- and
- (g) rinsing the photoresist layer using a thinner for rinsing photoresist after any one step of (a) to (e) steps, the thinner including 50 to 80 wt % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate.
Dependencies are inferred from the claim text.